 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| ! "#$ ! %&''( ) )* * %! +%$ "# & ,-! ! ! " $# $$ # . / 0 " ! $ #$) ! # 1 ! !$ $ $) . collecto r emitter gate r 2 r 1 !!" #! # # $ % # % $ # # #! $ & $ #&'( ( # ) * +,, - +2313( )* ) * +,., 2313( ) * +,./ - 2313( -0 /10 %( /0 %" 2 3 4 3 0 53 ,0 21 2,64 3 6 2,64(3 1%7 absolute maximum ratings parameter max unit condition v ces collector-to-emitter voltage clamped v r g = 1k ohm i c @ t c = 25c continuous collector current 20 a v ge = 5v i c @ t c = 110c continuous collector current 14 a v ge = 5v i g continuous gate current 1 ma i gp peak gate current 10 ma t pk = 1ms, f = 100hz v ge gate-to-emitter voltage clamped v p d @ t c = 25c maximum power dissipation 125 w p d @ t = 110c maximum power dissipation 54 w t j operating junction and - 40 to 175 c t stg storage temperature range - 40 to 175 c v esd electrostatic voltage 6 kv c = 100pf, r = 1.5k ohm i l self-clamped inductive switching current 11.5 a l = 4.7mh, t = 25c thermal resistance parameter min typ max uni t r jc thermal resistance, junction-to-case 1.2 r ja thermal resistance, junction-to-ambient 40 c/w (pcb mounted, steady state) z jc transient thermal impedance, juction-to-case (fig.11) 45246 off-state electrical charasteristics @ t j = 25c (unless otherwise specified) parameter min typ max unit conditions fi g bv ces collector-to-emitter breakdown voltage 370 400 430 v r g = 1k ohm, i c =7a, v ge = 0v bv ges gate-to-emitter breakdown voltage 10 12 v i g =2m a i ces collector-to-emitter leakage current 15 a r g =1k ohm, v ce = 250v 100 a r g =1k ohm, v ce = 250v, t j =150c bv cer emitter-to-collector breakdown voltage 24 28 v i c = -10m a r 1 gate series resistance 75 ohm r 2 gate-to-emitter resistance 10 20 30 k ohm on-state electrical charasteristics @ t j = 25c (unless otherwise specified) parameter min typ max unit conditions fi g 1.2 1.40 i c = 7a, v ge = 4.5v v ce(on) collector-to-emitter saturation 1.35 1.55 v i c = 10a, v ge = 4.5v 1 voltage 1.35 1.55 i c = 10a, v ge = 4.5v, t c = -40 o c 2 1.5 1.7 i c = 14a, v ge = 5.0v, t c = -40 o c 4 1.55 1.75 i c = 14a, v ge = 5.0v 1.6 1.8 i c = 14a, v ge = 5.0v, t c =150 o c v ge(th) gate threshold voltage 1.3 1.8 2.2 v v ce = v ge , i c = 1 m a, t c =25 o c 3, 5 0.75 1.8 v ce = v ge , i c = 1 m a, t c =150 o c 8 g fs transconductance 10 15 19 s v ce = 25v, i c = 10a, t c =25 o c i c collector current 20 a v ce = 10v, v ge = 4.5v switching characteristics @ t j = 25c (unless otherwise specified) parameter min typ max unit conditions fi g q g total gate charge 27 i c = 10a, v ce =12v, v ge =5v 7 q ge gate - emitter charge 2.5 nc i c = 10a, v ce =12v, v ge =5v 15 q gc gate - collector charge 10 i c = 10a, v ce =12v, v ge =5v t d (on) turn - on delay time 0.6 0.9 1.35 v ge =5v, r g =1k ohm, l=1mh, v ce =14v 12 t r rise time 1.6 2.8 4 s v ge =5v, r g =1k ohm, l=1mh, v ce =14v 14 t d (off) turn - off delay time 3.7 6 8.3 v ge =5v, r g =1k ohm, l=1mh, v ce =300v c ies input capacitance 550 825 v ge =0v, v ce =25v, f=1m h z c oes output capacitance 100 150 pf v ge =0v, v ce =25v, f=1m h z 6 c res reverse transfer capacitance 12 18 v ge =0v, v ce =25v, f=1m h z 25 l=0.7m h, t c =25c i l self-clamped 15.5 a l=2.2m h, t c =25c 9 inductive switching current 11.5 l=4.7m h, t c =25c 10 16.5 l=1.5m h, t c =150c 13 7.5 l=4.7m h, t c =150c 14 6 l=8.7m h, t c =150c t j =150 o c, t sc short circuit withstand time 120 s v cc = 16v, l = 10h 14 r g = 1k ohm, v ge = 5v fig.4 - typical v ce vs t j v ge =4.5v 1.0 1.1 1.2 1.3 1.4 1.5 1.6 -50 0 50 100 150 200 t j (c) v c e ( v ) i c = 7a i c = 10a fig.3 - transfer characteristics v ce =20v; tp=20s 0 10 20 30 40 50 60 70 80 90 100 0246810 v ge (v) i c e ( a ) t j = 25c t j = 125c fig.1 - typ. output characteristics t j =25c 0 10 20 30 40 50 60 0123456 v ce (v) i c ( a ) v ge = 10 v v ge = 5.0v v ge = 4.5v v ge = 4.0v v ge = 3.7v fig.2 - typ. output characteristics t j =125c 0 10 20 30 40 50 60 0123456 v ce (v) i c ( a ) v ge = 10 v v ge = 5.0v v ge = 4.5v v ge = 4.0v v ge = 3.7v fig.7 - typ. gate charge vs v ge i c =10a; v ce =12v; v ge =5v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 5 10 15 20 25 30 q g , total gate charge (nc) v g e ( v ) fig.6 - typ. capacitance vs v ce v ge =0v; v ce =25v; f=1mhz 1 10 100 1000 110100 v ce (v) c a p a c i t a n c e ( p f ) c ies c res c oes fig.8 - typical v ce vs v ge 0 2 4 6 8 10 12 14 16 18 20 2.5 3 3.5 4 4.5 v ge (v) v c e ( v ) i c = 7a; 125c i c = 7a; 25c i c =10a; 125c i c =10a; 25c fig.5 - typical v ge(th) vs t j i c =1ma 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 0 50 100 150 200 t j (c) v g e ( t h ) ( v ) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) * .22% %! # #$ ,7 1 fig.9 - self-clamp avalance current vs inductance @ 25c 10 15 20 25 30 35 40 012345 inductance (mh) o p e n - s e c o n d a r y c u r r e n t ( a ) minimum typical fig.10 - self-clamp avalance current vs inductance @ 150c 4 6 8 10 12 14 16 18 20 0246810 inductance (mh) o p e n - s e c o n d a r y c u r r e n t ( a ) minimum typical fig.13 - self-clamped inductive switching waveform l=4.7mh; t c =25c; used circuit in fig.14 0 2 4 6 8 10 12 -2.e-05 -1.e-05 0.e+00 1.e-05 2.e-05 3.e-05 4.e-05 5.e-05 6.e-05 time i c e ( a ) -100 0 100 200 300 400 500 v c l a m p ( v ) v clamp i ce fig.12 - switching waveform for time measurement v ge = 5v; r g = 1k ? ; l= 1mh; v ce = 14v; used circuit in fig.14 -50 0 50 100 150 200 250 300 350 400 450 -14 -10 -6 -2 2 6 10 14 t (s) v c l a m p ( v ) -2 -1 0 1 2 3 4 5 6 7 8 v g e ( v ) v cl (measured) v clamp v ge t d (o f f ) t r 1k vcc dut 0 l l 0.47 ? d.u.t. ice 1k ? dimensions are shown in millimeters (inches) note: "p" in as s embly line pos ition indicates "l ead-f ree" f 530s t his is an irf530s wit h l ot code 8024 as s e mb le d on ww 02, 2000 in the assembly line "l" assembly lot code int e rnat ional r e ct if ie r logo part numb er dat e code ye ar 0 = 2000 we e k 02 line l f 530s a = assembly site code week 02 p = designates lead-free product (optional) r e ct if ie r int ernat ional logo lot code assembly ye ar 0 = 2000 dat e code part number to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) as s e mb l y lot code rectifier int e rnat ional as s e mb le d on ww 19, 1997 note: "p" in as s embly line pos ition indicates "l ead-f ree" in the assembly line "c" logo t his is an irl 3103l lot code 1789 example: line c dat e code wee k 19 ye ar 7 = 1997 part number part number logo lot code as s e mb l y int e rnat ional re ct if ier product (optional) p = d e s ign at e s l e ad -f r e e a = as s e mb l y s it e code week 19 ye ar 7 = 1997 date code or lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copac k 1- gate 2- collector 3- emitter 4- collector dimensions are shown in millimeters (inches) example: in the assembly line "c" t his is an irf1010 lot code 1789 as s e mb le d on ww 19, 1997 part numbe r assembly lot code dat e code ye ar 7 = 1997 line c week 19 logo rectifier int e rnat ional note: "p" in assembly line position indicates "lead-free" ! " dimensions are shown in millimeters (inches) 3 4 4 trr f eed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl f eed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957 ) 23.90 (.941 ) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362 ) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/04 note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ |
Price & Availability of IRGB14C40LPBF
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |